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Titolo:
Middle stage heat treatment for microstructure control of reaction-bonded silicon nitride-silicon carbide composite
Autore:
Kondo, N; Kaneko, K; Suzuki, Y; Ohji, T;
Indirizzi:
Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan Natl Ind Res Inst Nagoya Nagoya Aichi Japan 4628510 Aichi 4628510, Japan Japan Sci & Technol Corp, Ceram Superplast Project, Atsuta Ku, Nagoya, Aichi 4568587, Japan Japan Sci & Technol Corp Nagoya Aichi Japan 4568587 Aichi 4568587, Japan
Titolo Testata:
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
fascicolo: 5, volume: 108, anno: 2000,
pagine: 445 - 448
SICI:
0914-5400(200005)108:5<445:MSHTFM>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
MECHANICAL-PROPERTIES; FRACTURE-TOUGHNESS; CERAMICS; SI3N4;
Keywords:
silicon nitride-silicon carbide nanocomposite; microstructure control; middle stage heat treatment; fracture toughness;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Kondo, N Natl Ind Res Inst Nagoya, Kita Ku, Hirate Cho 1-1, Nagoya, Aichi 4628510, Japan Natl Ind Res Inst Nagoya Hirate Cho 1-1 Nagoya Aichi Japan 4628510
Citazione:
N. Kondo et al., "Middle stage heat treatment for microstructure control of reaction-bonded silicon nitride-silicon carbide composite", J CERAM S J, 108(5), 2000, pp. 445-448

Abstract

A silicon nitride-silicon carbide composite was fabricated from silicon and carbon powders by reaction-bonding and post-hot-pressing procedures. The fabricated specimens had a nanocomposite-like microstructure with beta-silicon nitride and beta-silicon carbide. For some specimens, middle-stage heattreatment was applied before hot-pressing, which resulted in microstructure formation with large and elongated silicon nitride grains. With this microstructure, the specimens subjected to the middle stage heat treatment exhibited much higher fracture toughness than those not subjected to it.

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Documento generato il 25/09/20 alle ore 16:03:18