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Titolo:
Scanning tunneling spectroscopy investigation of the strained Si1-xGex band structure
Autore:
Chen, XD; Wang, XD; Liu, KC; Kim, DW; Banerjee, S;
Indirizzi:
Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas Austin TXUSA 78712 , Microelect Res Ctr, Austin, TX 78712 USA
Titolo Testata:
JOURNAL OF MATERIALS RESEARCH
fascicolo: 6, volume: 15, anno: 2000,
pagine: 1257 - 1260
SICI:
0884-2914(200006)15:6<1257:STSIOT>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAP; DISCONTINUITIES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Chen, XD Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas Austin TX USA 78712 ect Res Ctr, Austin, TX 78712 USA
Citazione:
X.D. Chen et al., "Scanning tunneling spectroscopy investigation of the strained Si1-xGex band structure", J MATER RES, 15(6), 2000, pp. 1257-1260

Abstract

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situ scanning tunneling spectroscopy was employed to measure the valence-band offset of strained Si1-xGex-on-Si (100) for the first time. The valence-band offsets of the strained Si0.77Ge0.23 and Si0.59Ge0.41 on Si(100) were found to be 0.21 and 0.36 eV, respectively. The results were in good agreement with theory and with results from other experimental methods. Due to band bendingand surface states, it was difficult to determine the conduction band edgeat the interface of the Si1-xGex/Si exactly but we found that the conduction band offset is much smaller than the valence-band offset.

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Documento generato il 01/04/20 alle ore 21:01:53