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Titolo:
OHMIC CONTACTS TO N-TYPE POLYCRYSTALLINE SIC FOR HIGH-TEMPERATURE MICROMECHANICAL APPLICATIONS
Autore:
KRIZ J; GOTTFRIED K; SCHOLZ T; KAUFMANN C; GESSNER T;
Indirizzi:
TECH UNIV CHEMNITZ ZWICKAU,ZENTRUM MIKROTECHNOL D-09107 CHEMNITZ GERMANY ANGEW FESTKORPERANALYT GMBH,INST FRESENIUS D-01109 DRESDEN GERMANY
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 46, anno: 1997,
pagine: 180 - 185
SICI:
0921-5107(1997)46:1-3<180:OCTNPS>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Keywords:
ATOMIC FORCE MICROSCOPY; MICROMECHANICAL APPLICATIONS; POLYCRYSTALLINE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
J. Kriz et al., "OHMIC CONTACTS TO N-TYPE POLYCRYSTALLINE SIC FOR HIGH-TEMPERATURE MICROMECHANICAL APPLICATIONS", Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 180-185

Abstract

Highly doped n-type polycrystalline 3C-SiC films were examined for further use in high-temperature applications. The specific contact resistance of TiW contacts was determined using the circular transmission line method by Marlow and Das. The TiW-SiC interface was investigated by means of auger electron spectroscopy (AES) depth-profiles and atomicforce microscopy (AFM) surface scans. In addition n-type 6H-SiC was used for reference purposes. It was found that these polycrystalline films were extremely rough (up to 70 nm) and therefore have a wide metalSiC interface, so that no certain statement about interface reaction could be made. The reference samples showed no interface reaction. TiWshows a good ohmic contact behaviour with a specific contact resistance of rho(C) = 7.8 x 10(-5) Omega cm(2) to polycrystalline 3C-SiC and with a rho(C) = 3.4 x 10(-4) Omega cm(2) to 6H-SiC. (C) 1997 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 11/07/20 alle ore 04:04:38