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Titolo:
INVESTIGATION OF GROWTH-CONDITIONS FOR EPITAXIAL-GROWTH OF SIC ON SI IN THE SOLID-SOURCE MOLECULAR-BEAM EPITAXY
Autore:
PFENNIGHAUS K; FISSEL A; KAISER U; WENDT M; KRAUSSLICH J; PEITER G; SCHROTER B; RICHTER W;
Indirizzi:
UNIV JENA,INST FESTKORPERPHYS,MAX WIEN PL 1 D-07743 JENA GERMANY INST PHYS HOCHTECHNOL D-07702 JENA GERMANY UNIV JENA,INST OPT & QUANTENELEKTR D-07743 JENA GERMANY UNIV JENA,INST PHYS CHEM D-07743 JENA GERMANY
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 46, anno: 1997,
pagine: 164 - 167
SICI:
0921-5107(1997)46:1-3<164:IOGFEO>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS;
Keywords:
GROWTH MODE; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; X-RAY DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
K. Pfennighaus et al., "INVESTIGATION OF GROWTH-CONDITIONS FOR EPITAXIAL-GROWTH OF SIC ON SI IN THE SOLID-SOURCE MOLECULAR-BEAM EPITAXY", Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 164-167

Abstract

Thin crystalline SiC films were grown on Si(111) using solid state evaporation at substrate temperatures between 780 and 900 degrees C. Thegrowth rates were in the range between 30 and 120 nm h(-1). The filmswere characterized by in situ reflection high-energy electron diffraction (RHEED) and ex situ transmission electron microscopy (TEM), scanning electron microscopy (SEM), infrared (IR) spectroscopy and X-ray diffraction (XRD. The films grown at high temperatures and low growth rates were found to be epitaxial. They mostly consist of twinned-cubic structure, but with increasing layer thickness hexagonal stacking sequences often were found. In the orientation distribution function full width at half maximum (FWHM) values of down to 1 degrees were measured. (C) 1997 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 20:10:10