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Titolo:
MBE-GROWN HGCDTE MULTILAYER HETEROJUNCTION STRUCTURES FOR HIGH-SPEED LOW-NOISE 1.3-1.6-MU-M AVALANCHE PHOTODETECTORS
Autore:
WU OK; RAJAVEL RD; DELYON TJ; JENSEN JE; JACK MD; KOSAI K; CHAPMAN GR; SEN S; BAUMGRATZ BA; WALKER B; JOHNSON B;
Indirizzi:
HUGHES RES LABS MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117 UNIV MARYLAND,PHYS SCI LAB COLLEGE PK MD 00000
Titolo Testata:
Journal of electronic materials
fascicolo: 6, volume: 26, anno: 1997,
pagine: 488 - 492
SICI:
0361-5235(1997)26:6<488:MHMHSF>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
HG1-XCDXTE; TEMPERATURE;
Keywords:
AVALANCHE PHOTODETECTORS; HGCDTE; MOLECULAR BEAM EPITAXY (MBE);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
O.K. Wu et al., "MBE-GROWN HGCDTE MULTILAYER HETEROJUNCTION STRUCTURES FOR HIGH-SPEED LOW-NOISE 1.3-1.6-MU-M AVALANCHE PHOTODETECTORS", Journal of electronic materials, 26(6), 1997, pp. 488-492

Abstract

HgCdTe is an attractive material for room-temperature avalanche photodetectors (APDs) operated at 1.3-1.6 mu m wavelengths for fiber optical communication applications because of its bandgap tunability and theresonant enhancement of hole impact ionization for CdTe fractions near 0.73. The HgCdTe based separate absorption and multiplication avalanche photodetector is designed and fabricated for backside illuminationthrough a CdZnTe substrate. The multi-layer device structure is comprised of seven layers including 1). n(+) contact 2). n(-) diffusion buffer 3). n(-) absorber 4). n charge sheet 5). n(-) avalanche gain 6). pto form junction, and 7), p(+) contact, Several wafers were processedinto 45 mu m x 45 pm and 100 mu m x 100 mu m devices. The mean value of avalanche voltage is 63.7 V measured at room temperature, At 1 GHz,the device shows a gain of about 7 for a gain-bandwidth product of 7 GHz. This first demonstration of an all molecular beam epitaxially grown HgCdTe multi-layer heterojunction structure on CdZnTe substrates represents a significant advance toward the goal of producing reliable room temperature HgCdTe high speed, low noise avalanche photodetectors.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/08/20 alle ore 16:01:41