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Titolo:
Disorder-induced dephasing in semiconductors
Autore:
Weiser, S; Meier, T; Mobius, J; Euteneuer, A; Mayer, EJ; Stolz, W; Hofmann, M; Ruhle, WW; Thomas, P; Koch, SW;
Indirizzi:
Univ Marburg, Dept Phys, D-35032 Marburg, Germany Univ Marburg Marburg Germany D-35032 Dept Phys, D-35032 Marburg, Germany Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany Univ Marburg MarburgGermany D-35032 r Mat Sci, D-35032 Marburg, Germany
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 19, volume: 61, anno: 2000,
pagine: 13088 - 13098
SICI:
0163-1829(20000515)61:19<13088:DDIS>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS QUANTUM-WELLS; POLARIZATION DEPENDENCE; OPTICAL-RESPONSE; PHOTON-ECHO; 4-WAVE-MIXING SPECTROSCOPY; MIXED-CRYSTALS; HEAVY-HOLE; EXCITONS; BEATS; HETEROSTRUCTURES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
47
Recensione:
Indirizzi per estratti:
Indirizzo: Mayer, EJ Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany Univ Marburg Renthof 5 Marburg Germany D-35032 Marburg, Germany
Citazione:
S. Weiser et al., "Disorder-induced dephasing in semiconductors", PHYS REV B, 61(19), 2000, pp. 13088-13098

Abstract

Microscopic calculations including energetic disorder and Coulomb correlations up to third order in the laser field are performed. The resulting four-wave-mixing signals show polarization-dependent dephasing induced by diagonal disorder. The correct modeling of this disorder induced dephasing requires the proper inclusion of Coulomb correlations. The theoretical results are in good qualitative agreement with measurements performed on a variety of quantum-well samples.

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Documento generato il 24/11/20 alle ore 13:31:32