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Titolo:
A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon
Autore:
Sakamoto, T; Yoshida, N; Harada, H; Kishida, T; Nonomura, S; Gotoh, T; Kondo, M; Matsuda, A; Itoh, T; Nitta, S;
Indirizzi:
Gifu Univ, Fac Engn, Dept Elect & Comp Engn, Gifu 5011193, Japan Gifu Univ Gifu Japan 5011193 Dept Elect & Comp Engn, Gifu 5011193, Japan Gifu Univ, Grad Sch Engn, Environm & Renewable Energy Syst Div, Gifu 5011193, Japan Gifu Univ Gifu Japan 5011193 ewable Energy Syst Div, Gifu 5011193, Japan Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 uba, Ibaraki 3058568, Japan
Titolo Testata:
JOURNAL OF NON-CRYSTALLINE SOLIDS
, volume: 266, anno: 2000,
parte:, A
pagine: 481 - 485
SICI:
0022-3093(200005)266:<481:ASOTCB>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Sakamoto, T Gifu Univ, Fac Engn, Dept Elect & Comp Engn, 1-1 Yanagido, Gifu 5011193, Japan Gifu Univ 1-1 Yanagido Gifu Japan 5011193 Gifu 5011193, Japan
Citazione:
T. Sakamoto et al., "A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon", J NON-CRYST, 266, 2000, pp. 481-485

Abstract

A photoinduced volume expansion phenomenon in hydrogenated amorphous silicon (a-Si:H) films has been studied from a viewpoint of the initial stress in the film by using the optical-lever bending method. The dependence on deposition temperature for the photoinduced expansion and the initial stress is similar, that is, both have maximum stress at a deposition temperature of300 degrees C. On the other hand, little difference in the photoinduced expansion was observed among films prepared at the same substrate temperaturewhich have different initial stresses. These results indicate that an internal stress does not affect the photoinduced expansion and that intrinsic stress due to the structure of a-Si:H is the origin of the phenomenon. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/07/20 alle ore 23:04:16