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Titolo:
Low-threshold interband cascade lasers with power efficiency exceeding 9%
Autore:
Bruno, JD; Bradshaw, JL; Yang, RQ; Pham, JT; Wortman, DE;
Indirizzi:
USA, Res Lab, Adelphi, MD 20783 USA USA Adelphi MD USA 20783USA, Res Lab, Adelphi, MD 20783 USA
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 22, volume: 76, anno: 2000,
pagine: 3167 - 3169
SICI:
0003-6951(20000529)76:22<3167:LICLWP>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
II QUANTUM-WELLS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Yang, RQ USA, Res Lab, 2800 Powder Mill Rd, Adelphi, MD 20783 USA USA 2800Powder Mill Rd Adelphi MD USA 20783 delphi, MD 20783 USA
Citazione:
J.D. Bruno et al., "Low-threshold interband cascade lasers with power efficiency exceeding 9%", APPL PHYS L, 76(22), 2000, pp. 3167-3169

Abstract

Midinfrared (3.6-3.8 mu m) interband cascade lasers based on InAs/GaInSb type-II quantum wells have been demonstrated in the continuous-wave (cw) mode with low-threshold current densities (e.g., similar to 56 A/cm(2) at 80 K) and power efficiencies exceeding 9%. At a relatively low current of 0.4 A, we observed similar to 100 mW/facet of optical power out at 80 K (124 mW at 60 K) from lasers mounted epilayer-side up with uncoated facets. These lasers were able to operate in the cw mode at temperatures up to 127 K. Also, in the pulsed mode, devices lased at temperatures up to 250 K and displayed, at 80 K, a peak power efficiency exceeding 11%. (C) 2000 American Institute of Physics. [S0003-6951(00)02222-1].

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Documento generato il 30/11/20 alle ore 16:35:09