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Titolo:
Wave fronts may move upstream in semiconductor superlattices
Autore:
Carpio, A; Bonilla, LL; Wacker, A; Scholl, E;
Indirizzi:
Univ Complutense, Dept Matemat Aplicada, E-28040 Madrid, Spain Univ Complutense Madrid Spain E-28040 at Aplicada, E-28040 Madrid, Spain Univ Carlos III Madrid, Dept Matemat, Leganes 28911, Spain Univ Carlos IIIMadrid Leganes Spain 28911 Matemat, Leganes 28911, Spain Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 et Phys, D-10623 Berlin, Germany
Titolo Testata:
PHYSICAL REVIEW E
fascicolo: 5, volume: 61, anno: 2000,
parte:, A
pagine: 4866 - 4876
SICI:
1063-651X(200005)61:5<4866:WFMMUI>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRIC-FIELD DOMAINS; GAAS-ALAS SUPERLATTICES; NEGATIVE DIFFERENTIAL CONDUCTIVITY; CHARGE-DENSITY WAVES; GAAS/ALAS SUPERLATTICES; TRANSPORT PHENOMENON; SELF-OSCILLATIONS; BIFURCATION; STABILITY; DYNAMICS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
48
Recensione:
Indirizzi per estratti:
Indirizzo: Carpio, A Univ Complutense, Dept Matemat Aplicada, E-28040 Madrid, Spain Univ Complutense Madrid Spain E-28040 a, E-28040 Madrid, Spain
Citazione:
A. Carpio et al., "Wave fronts may move upstream in semiconductor superlattices", PHYS REV E, 61(5), 2000, pp. 4866-4876

Abstract

In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.

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Documento generato il 04/12/20 alle ore 22:24:26