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Titolo:
Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma
Autore:
Gao, JS; Wang, JL; Sakai, N; Iwanaga, K; Muraoka, K; Nakashima, H; Gao, DW; Furukawa, K;
Indirizzi:
Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580,Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 i, Kasuga, Fukuoka 8168580,Japan Kyushu Univ, Adv Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 , Kasuga, Fukuoka 8168580, Japan
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 3, volume: 18, anno: 2000,
pagine: 873 - 878
SICI:
0734-2101(200005/06)18:3<873:SOTEOD>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SILICON EPITAXY; GROWTH; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Gao, JS Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580,Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 a, Fukuoka 8168580,Japan
Citazione:
J.S. Gao et al., "Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma", J VAC SCI A, 18(3), 2000, pp. 873-878

Abstract

It was found that epitaxial Si films could be deposited on Si substrates by using a sputtering-type electron cyclotron resonance plasma that had a conventional base pressure of 5 X 10(-7) Torr. The effects of discharge conditions and substrate temperature were studied systematically in order to understand the necessary conditions for epitaxial growth. It was found that discharge gas pressure, target power for sputtering, and substrate temperature play crucial roles in the epitaxial deposition. The implications of the changes of the three parameters are discussed in detail. (C) 2000 American Vacuum Society. [S0734-2101(00)02503-3].

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Documento generato il 15/01/21 alle ore 23:13:21