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Titolo:
Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature
Autore:
Kumar, PSA; Jansen, R; vant Erve, OMJ; Vlutters, R; de Haan, P; Lodder, JC;
Indirizzi:
Univ Twente, MESA Res Inst, Informat Storage Technol Grp, NL-7500 AE Enschede, Netherlands Univ Twente Enschede Netherlands NL-7500 AE 500 AE Enschede, Netherlands
Titolo Testata:
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
fascicolo: 1-2, volume: 214, anno: 2000,
pagine: L1 - L6
SICI:
0304-8853(200005)214:1-2<L1:LMA2IA>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
GIANT MAGNETORESISTANCE; TUNNEL-JUNCTIONS; MULTILAYERS; EXCHANGE; CO/CU;
Keywords:
hot electron; spin valve; magnetotransport; Schottky barrier;
Tipo documento:
Letter
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Kumar, PSA Univ Twente, MESA Res Inst, Informat Storage Technol Grp, POB 217, NL-7500AE Enschede, Netherlands Univ Twente POB 217 Enschede Netherlands NL-7500 AE etherlands
Citazione:
P.S.A. Kumar et al., "Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature", J MAGN MAGN, 214(1-2), 2000, pp. L1-L6

Abstract

A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 02/04/20 alle ore 12:07:27