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Titolo:
In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN
Autore:
Jiang, W; Weber, WJ; Thevuthasan, S;
Indirizzi:
Pacific NW Natl Lab, Richland, WA 99352 USA Pacific NW Natl Lab Richland WA USA 99352 atl Lab, Richland, WA 99352 USA
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 11, volume: 87, anno: 2000,
pagine: 7671 - 7678
SICI:
0021-8979(20000601)87:11<7671:ISICSO>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
RADIATION-DAMAGE; SILICON-CARBIDE; IRRADIATION; MG; AMORPHIZATION; ACCUMULATION; RECOVERY; DEFECTS; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, W Pacific NW Natl Lab, Richland, WA 99352 USA Pacific NW Natl Lab Richland WA USA 99352 Richland, WA 99352 USA
Citazione:
W. Jiang et al., "In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN", J APPL PHYS, 87(11), 2000, pp. 7671-7678

Abstract

Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV Au2+ (60 degrees off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscatteringspectrometry in a < 0001 >-channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 Au2+/nm(2) for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peakwas observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and near the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime near the surface and Au trapping at irradiation-induced defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN. (C) 2000 American Institute of Physics. [S0021-8979(00)07111-5].

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Documento generato il 20/01/20 alle ore 22:11:04