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Titolo:
Proximity effects and Andreev reflection in a mesoscopic SNS junction withperfect NS interfaces
Autore:
Kvon, ZD; Baturina, TI; Donaton, RA; Baklanov, MR; Maex, K; Olshanetsky, EB; Plotnikov, AE; Portal, JC;
Indirizzi:
Inst Semicond Phys, Novosibirsk 630090, Russia Inst Semicond Phys Novosibirsk Russia 630090 Novosibirsk 630090, Russia IMEC, B-3001 Louvain, Belgium IMEC Louvain Belgium B-3001IMEC, B-3001 Louvain, Belgium CNRS, LCMI, F-38042 Grenoble, France CNRS Grenoble France F-38042CNRS, LCMI, F-38042 Grenoble, France
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 17, volume: 61, anno: 2000,
pagine: 11340 - 11343
SICI:
1098-0121(20000501)61:17<11340:PEAARI>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY-GAP STRUCTURE; SUPERCONDUCTOR; CONDUCTANCE; TRANSPORT; MICROJUNCTIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Kvon, ZD Inst Semicond Phys, Novosibirsk 630090, Russia Inst Semicond Phys Novosibirsk Russia 630090 rsk 630090, Russia
Citazione:
Z.D. Kvon et al., "Proximity effects and Andreev reflection in a mesoscopic SNS junction withperfect NS interfaces", PHYS REV B, 61(17), 2000, pp. 11340-11343

Abstract

Low-temperature transport measurements on superconducting film-normal wire-superconducting film (SNS) junctions fabricated on the basis of thin superconducting polycrystalline PtSi films are reported. Due to the perfectness of SN boundaries in the junctions, zero bios resistance dip related to paircurrent proximity effect and subharmonic energy gap structure originating from phase coherent mulitple Andreev reflections have been observed and studied.

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Documento generato il 19/09/20 alle ore 12:44:07