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Titolo:
Photoluminescence properties of porous a-Si
Autore:
Kanemitsu, Y; Fukunishi, Y; Kushida, T;
Indirizzi:
Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan Nara Inst Sci & Technol Nara Japan 6300101 Mat Sci, Nara 6300101, Japan
Titolo Testata:
JOURNAL OF LUMINESCENCE
, volume: 87-9, anno: 2000,
pagine: 460 - 462
SICI:
0022-2313(200005)87-9:<460:PPOPA>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-SILICON NANOSTRUCTURES; DEPENDENT PHOTOLUMINESCENCE; DECAY DYNAMICS; LUMINESCENCE;
Keywords:
porous silicon; amorphous silicon; quantum confinement; exciton localization;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Kanemitsu, Y Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan Nara Inst Sci & Technol Nara Japan 6300101 a 6300101, Japan
Citazione:
Y. Kanemitsu et al., "Photoluminescence properties of porous a-Si", J LUMINESC, 87-9, 2000, pp. 460-462

Abstract

We have studied luminescence properties of porous a-Si prepared by electrochemical anodization of hydrogenated a-Si films. Visible luminescence is observed at room temperature. The temperature dependences of the PL intensityand the PL decay time are weak, compared to the case of bulk a-Si : H. Theexciton confinement effect on visible luminescence porous of a-Si will be discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 00:54:28