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Titolo:
Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films
Autore:
Fujiwara, H; Koh, J; Rovira, PI; Collins, RW;
Indirizzi:
Penn State Univ, Ctr Thin Film Devices, Mat Res Lab, University Pk, PA 16802 USA Penn State Univ University Pk PA USA 16802 b, University Pk, PA 16802 USA Penn State Univ, Dept Phys, University Pk, PA 16802 USA Penn State Univ University Pk PA USA 16802 s, University Pk, PA 16802 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 16, volume: 61, anno: 2000,
pagine: 10832 - 10844
SICI:
1098-0121(20000415)61:16<10832:AOETIT>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
TIME SPECTROSCOPIC ELLIPSOMETRY; HYDROGENATED AMORPHOUS-SILICON; EFFECTIVE-MEDIUM MODELS; N SOLAR-CELLS; OPTICAL-PROPERTIES; GROWTH; CRYSTALLINE; CALIBRATION; ABSORPTION; LAYERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
53
Recensione:
Indirizzi per estratti:
Indirizzo: Fujiwara, H Thin Film Silicon Solar Cells SurperLab, Tsukuba, Ibaraki 3058568, Japan Thin Film Silicon Solar Cells SurperLab Tsukuba Ibaraki Japan 3058568
Citazione:
H. Fujiwara et al., "Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films", PHYS REV B, 61(16), 2000, pp. 10832-10844

Abstract

Real-time spectroscopic ellipsometry (SE) data collected during the nucleation and growth of hydrogenated amorphous silicon (a-Si:H) thin films have been analyzed by applying one and two layer optical models incorporating different effective medium theories (EMT's). The purpose of the EMT's is to simulate the dielectric functions of the microscopically inhomogeneous nucleating and surface roughness layers used in the models. Five one-parameter EMT's have been considered in this study for the characterization of three classes of microscopically inhomogeneous layers, including (i) 5-20 Angstrom-thick nucleating layers consisting of isolated a-Si:H clusters on the underlying substrate, (ii) 10-15 Angstrom-thick nucleation-induced surface roughness layers on very thin (<200 Angstrom) a-Si:H films, and (iii) 40-80 Angstrom-thick substrate-induced surface roughness layers on thicker (>2500 Angstrom) a-Si:H films. In all three applications, the Bruggeman effective medium approximation (EMA) provides the best overall fits to the time evolution of the SE data, and complexities beyond the simple one-parameter EMA cannot be justified in view of existing experimental limitations. Furthermore,many of the general features of nucleation, coalescence, and bulk layer growth deduced in the SE analysis and used in previous studies to understand and optimize materials and device fabrication, are found to be essentially independent of the EMT used in the analysis.

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Documento generato il 01/12/20 alle ore 07:54:19