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Titolo:
Influence of atomic layer deposition parameters on the phase content of Ta2O5 films
Autore:
Kukli, K; Ritala, M; Matero, R; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 3-4, volume: 212, anno: 2000,
pagine: 459 - 468
SICI:
0022-0248(200005)212:3-4<459:IOALDP>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; TANTALUM OXIDE-FILMS; THIN-FILMS; DIELECTRIC-PROPERTIES; EPITAXY GROWTH; H2O; TA(OC2H5)(5); MORPHOLOGY; CAPACITORS; TACL5;
Keywords:
tantalum oxide; tantalum chloride; atomic layer epitaxy; atomic layer deposition; phase transformation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
41
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 elsinki, Finland
Citazione:
K. Kukli et al., "Influence of atomic layer deposition parameters on the phase content of Ta2O5 films", J CRYST GR, 212(3-4), 2000, pp. 459-468

Abstract

Ta2O5 films were grown in atomic layer deposition (ALD) process on barium borosilicate glass substrates in the temperature range of 300-400 degrees Cfrom TaCl5 and H2O. The film crystallinity was modified by precursor dosing and substrate temperature. The films deposited at temperatures somewhat above 300 degrees C were partly crystallized, showing XRD reflections of hexagonal delta-Ta-2 O-5 phase. The reflection intensities and film haziness demonstrated maxima at certain values of the TaCl5 pulse length. The film growth rate initially decreased with the increase in the pulse length. After exceeding the TaCl5 pulse length value corresponding to the maximum in the crystallinity, the Ta-2 O-5 growth rate was stabilized. The intermediate delta-Ta-2 O-5 was transformed into the conventional low-temperature orthorhombic beta-Ta-2 O-5 upon raising the growth temperature above 325 degrees C and increasing the TaCl5 doses. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 27/09/20 alle ore 12:52:50