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Titolo:
The effect of Pd coating on electron emission from silicon field emitter arrays
Autore:
Lee, JL; Oh, SP; Han, SY; Kang, SY; Lee, JH; Cho, KI;
Indirizzi:
Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Phoang 790784, Kyungbuk, South Korea Pohang Univ Sci & Technol Phoang Kyungbuk South Korea 790784 South Korea Elect & Telecommun Res Inst, Semicond Technol Div, Taejon 305600, South Korea Elect & Telecommun Res Inst Taejon South Korea 305600 05600, South Korea
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 10, volume: 87, anno: 2000,
pagine: 7349 - 7353
SICI:
0021-8979(20000515)87:10<7349:TEOPCO>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
VACUUM MICROELECTRONICS; EFFICIENCY; CARBON; FILMS; TIPS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, JL Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Phoang 790784, Kyungbuk, South Korea Pohang Univ Sci & Technol Phoang Kyungbuk South Korea 790784 orea
Citazione:
J.L. Lee et al., "The effect of Pd coating on electron emission from silicon field emitter arrays", J APPL PHYS, 87(10), 2000, pp. 7349-7353

Abstract

Uniform silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening, and the effect of Pd-coated layer on electron emission characteristics was studied. The electron emission fromSi field emitter arrays (FEAs) was a little improved by removing surface oxide on the FEA, but pronounced drastically by coating 100-A-thick Pd metallayer. The turn-on voltage in the Pd-coated Si FEAs reduced by 30 V in comparison with that in noncoated ones. This is resulted from the increase of surface roughness at the tip apex by the Pd coating on Si FEA, via the decrease of the apex radius at which electrons are emitting. The Pd-coated emitters showed superior operating stability over a wide current range to that of the noncoated ones. This suggests that Pd coating enhanced the high temperature stability and surface inertness of Si FEA. (C) 2000 American Institute of Physics. [S0021-8979(00)01605-4].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/04/20 alle ore 08:04:09