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Titolo:
Scanning probe microscopy - a tool for the investigation of high-k materials
Autore:
Landau, SA; Junghans, N; Weiss, PA; Kolbesen, BO; Olbrich, A; Schindler, G; Hartner, W; Hintermaier, F; Dehm, C; Mazure, C;
Indirizzi:
Univ Frankfurt, Inst Inorgan Chem Analyt Chem, D-60439 Frankfurt, Germany Univ Frankfurt Frankfurt Germany D-60439 hem, D-60439 Frankfurt, Germany Infineon Technol, Dept CFE FA5, D-81739 Munich, Germany Infineon Technol Munich Germany D-81739 CFE FA5, D-81739 Munich, Germany Infineon Technol, Dept MP TD Fe, D-81739 Munich, Germany Infineon TechnolMunich Germany D-81739 P TD Fe, D-81739 Munich, Germany
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 4, volume: 157, anno: 2000,
pagine: 387 - 392
SICI:
0169-4332(200004)157:4<387:SPM-AT>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS;
Keywords:
scanning probe microscopy (SPM); electrostatic force microscopy (EFM); conductive atomic force microscopy (C-AFM); high-k dielectric/ferroelectric materials; polarization; leakage current; strontium bismutate tantalate (SBT);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Landau, SA Univ Frankfurt, Inst Inorgan Chem Analyt Chem, Marie Curie St 11, D-60439 Frankfurt, Germany Univ Frankfurt Marie Curie St 11 Frankfurt Germany D-60439 any
Citazione:
S.A. Landau et al., "Scanning probe microscopy - a tool for the investigation of high-k materials", APPL SURF S, 157(4), 2000, pp. 387-392

Abstract

Dielectric/fenoelectric materials such as BaxSr1-xTiO3 (BST), PbZrxTi1-xO3(PZT), and SrBi2Ta2O9 (SBT) are currently being investigated for integration into high-density CMOS technology. In this study, the micromorphology ofpolycrystalline BST, PZT, and SET films was imaged by atomic force microscopy (AFM). Electrical properties such as polarization of the crystallites as well as tunneling/leakage currents were measured by electrostatic force microscopy (EFM) and conductive atomic force microscopy (C-AFM), respectively. EFM images revealed that single crystallites of PZT and SET films could be polarized by applying a voltage of a few volts between tip and film. Time and temperature stability of the polarization were studied in annealing experiments. As expected, polarization decreased faster with increasing temperature. C-AFM on BST and SET showed enhancement of leakage currents in grains and grain boundary regions, especially in depressions between adjacent crystallites. In thin SET films, sites of leakage current were frequently visible at the edges of steps of test patterns. The results achieved demonstrate that scanning probe microscopy (SPM) techniques are a valuable tool for the elucidation of the microscopic properties of high-k materials. In particular, they are capable of revealing the defects and discontinuities of the films that affect capacitor performance and reliability due to, e.g., fatigue, imprint, and leakage currents, issues of key interest in product applications. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 29/03/20 alle ore 11:11:47