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Titolo:
Strength measurement and calculations on silicon-based nanometric oscillators for scanning force microcopy operating in the gigahertz range
Autore:
Kawakatsu, H; Toshiyoshi, H; Saya, D; Fukushima, K; Fujita, H;
Indirizzi:
Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan Univ Tokyo Tokyo Japan 1068558 Ind Sci, Minato Ku, Tokyo 1068558, Japan
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 4, volume: 157, anno: 2000,
pagine: 320 - 325
SICI:
0169-4332(200004)157:4<320:SMACOS>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
CANTILEVERS; FABRICATION; MICROSCOPE;
Keywords:
scanning force microscopy; atomic force microscopy; non-contact; nanocantilever; nanometric oscillator;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Kawakatsu, H Univ Tokyo, Inst Ind Sci, Minato Ku, 7-22-1 Roppongi, Tokyo 1068558, Japan Univ Tokyo 7-22-1 Roppongi Tokyo Japan 1068558 068558, Japan
Citazione:
H. Kawakatsu et al., "Strength measurement and calculations on silicon-based nanometric oscillators for scanning force microcopy operating in the gigahertz range", APPL SURF S, 157(4), 2000, pp. 320-325

Abstract

For an oscillator having a structure that can be modeled as a concentratedmass-spring model with constant Q factor, its minimum detectable force gradient is proportional to (KM)(1/2), where M is the mass and K is the springconstant. Miniaturization of the oscillator acts favorably in increasing the force resolution, since drastic decrease of the mass can then be achieved. With the aim of increasing the force and mass resolution of the oscillator used for force detection in scanning force microscopy (SFM), we have developed a novel fabrication technique of nanometric oscillators by selectiveetching of laminated silicon substrates such as SOI (silicon on insulator)or SIMOX (separation by implanted oxygen). The oscillator has a tetrahedral or a conical tip supported by an elastic neck, and the tip serves as the mass. Typical size of the oscillator lies in the range of 100-1000 nm. The oscillator could be tailored to have its natural frequency in the range of 0.01-1 GHz, and a spring constant between 10(-1) and 10(2) N/m. The strength of the nanometric neck was 10(8) N/m(2) for both shear and normal forces,indicating that a neck 10 nm in diameter can withstand forces up to around50 nN. Calculations on the different vibrational modes of the oscillator gave a better guideline to the design of the oscillators. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 09:34:39