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Titolo:
Transition between the 1 x 1 and (root 3 x 2 root 3)R30 degrees surface structures of GaN in the vapor-phase environment
Autore:
Munkholm, A; Thompson, C; Stephenson, GB; Eastman, JA; Auciello, O; Fini, P; Speck, JS; DenBaars, SP;
Indirizzi:
Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 ab, Div Chem, Argonne, IL 60439 USA No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA No Illinois Univ De Kalb IL USA 60115 v, Dept Phys, De Kalb, IL 60115 USA Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA Argonne Natl Lab Argonne IL USA 60439 Div Mat Sci, Argonne, IL 60439 USA Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Univ CalifSanta Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA
Titolo Testata:
PHYSICA B
fascicolo: 1-3, volume: 283, anno: 2000,
pagine: 217 - 222
SICI:
0921-4526(200006)283:1-3<217:TBT1X1>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAY-DIFFRACTION; GROWTH; DEPOSITION;
Keywords:
GaN; surface reconstruction; MOCVD; phase transition; X-ray scattering;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Munkholm, A Argonne Natl Lab, Div Chem, 9700 S Cass Ave, Argonne, IL 60439USA Argonne Natl Lab 9700 S Cass Ave Argonne IL USA 60439 0439 USA
Citazione:
A. Munkholm et al., "Transition between the 1 x 1 and (root 3 x 2 root 3)R30 degrees surface structures of GaN in the vapor-phase environment", PHYSICA B, 283(1-3), 2000, pp. 217-222

Abstract

Out-of-plane structures of the GaN(0001) surface in the metal-organic chemical vapor deposition (MOCVD) environment have been determined using in situ grazing-incidence X-ray scattering. We measured 11 (2) over bar l crystaltruncation rod intensities at a variety of temperatures and ammonia partial pressures on both sides of the 1 x 1 to (root 3 x 2 root 3)R30 degrees surface phase transition. The out-of-plane structure of the (root 3 x 2 root 3)R30 degrees phase appears to be nearly independent of temperature below the transition, while the structure of the 1 x 1 phase changes increasingly rapidly as the phase transition is approached from above. A model for the structure of the 1 x 1 phase with a partially occupied top Ga layer agrees well with the data. The observed temperature dependence is consistent with asimple model of the equilibrium between the vapor phase and the surface coverage of Ga and N. In addition, we present results on the kinetics of reconstruction domain coarsening following a "quench" into the (root 3 x 2 root3)R30 degrees phase held. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 24/09/20 alle ore 01:20:09