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Titolo:
Fabrication of a silicon based nanometric oscillator with a tip form mass for scanning force microcopy operating in the GHz range
Autore:
Kawakatsu, H; Toshiyoshi, H; Saya, D; Fukushima, K; Fujita, H;
Indirizzi:
Univ Tokyo, Inst Ind Sci, Tokyo 1068558, Japan Univ Tokyo Tokyo Japan 1068558 Tokyo, Inst Ind Sci, Tokyo 1068558, Japan
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 2, volume: 18, anno: 2000,
pagine: 607 - 611
SICI:
1071-1023(200003/04)18:2<607:FOASBN>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
CANTILEVERS; MICROSCOPE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Kawakatsu, H Univ Tokyo, Inst Ind Sci, 7-22-1 Roppongi, Tokyo 1068558, Japan Univ Tokyo 7-22-1 Roppongi Tokyo Japan 1068558 068558, Japan
Citazione:
H. Kawakatsu et al., "Fabrication of a silicon based nanometric oscillator with a tip form mass for scanning force microcopy operating in the GHz range", J VAC SCI B, 18(2), 2000, pp. 607-611

Abstract

The detectable force resolution of a mechanical oscillator used in scanning force microscopy call be improved by increasing its natural frequency f(o) and quality factor Q, and by decreasing the spring constant k and the temperature of operation T. For an oscillator having a structure that can be modeled as a concentrated mass-spring model, decreasing the mass of the oscillator is desirable since high f(o) can then be obtained without increasingthe spring constant k. We have developed a novel fabrication technique forfabricating a nanometric oscillator by selective etching of silicon on insulator (SOI) wafers. The oscillator has the form of a tip supported by an elastic neck, and the tip serves as the mass. The tip and the neck length measure approximately 100 nm when fabricated using a separation by implanted oxygen wafer, and are around 1000 nm when fabricated using a bonded SOI wafer. The tips were made of silicon and the necks were made of silicon dioxide. The oscillator could be tailored to have its natural frequency in the range of 0.01-1 GHz and a spring constant between 10(-1) and 10(2) N/m. The thin neck, whose diameter is of the order of 10 nm is not brittle and can survive angular bending of around 30 degrees. (C) 2000 American Vacuum Society. [S0734-211X(00)05902-3].

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Documento generato il 21/09/20 alle ore 06:16:39