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Titolo:
Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV
Autore:
Cobet, C; Wilmers, K; Wethkamp, T; Edwards, NV; Esser, N; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany Max Planck Inst Festkorperforsch, D-7000 Stuttgart, Germany Max Planck Inst Festkorperforsch Stuttgart Germany D-7000 tgart, Germany Linkoping Univ, IFM Materiefys, Linkoping, Sweden Linkoping Univ Linkoping Sweden Univ, IFM Materiefys, Linkoping, Sweden
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 364, anno: 2000,
pagine: 111 - 113
SICI:
0040-6090(20000327)364:1-2<111:OPOSIB>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
BAND-STRUCTURE; POLYTYPES; CARBIDE;
Keywords:
dielectric function; optical properties; SiC; spectroscopic ellipsometry;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Cobet, C Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Hardenbergstr 36 Berlin Germany D-10623 Germany
Citazione:
C. Cobet et al., "Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV", THIN SOL FI, 364(1-2), 2000, pp. 111-113

Abstract

In this work, we present the dielectric function of hexagonal 4H- and 6H-SiC polytypes as well as the cubic 3C-SiC polytype in the energy range from 3.5 to 10 eV measured by spectroscopic ellipsometry. We operated with synchrotron radiation at the Berlin electron storage ring BESSY I. Additionally the samples were investigated by atomic force microscopy to correct the measured dielectric function for the influence of surface roughness. The experimental results are compared to theoretical calculations. (C) 2000 ElsevierScience S.A. All rights reserved.

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Documento generato il 18/01/21 alle ore 15:36:12