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Titolo:
In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry
Autore:
Meyne, C; Gensch, M; Peters, S; Pohl, UW; Zettler, JT; Richter, W;
Indirizzi:
Tech Univ Berlin, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 Berlin, D-10623 Berlin, Germany SENTECH Instruments GmbH, D-12484 Berlin, Germany SENTECH Instruments GmbH Berlin Germany D-12484 D-12484 Berlin, Germany
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 364, anno: 2000,
pagine: 12 - 15
SICI:
0040-6090(20000327)364:1-2<12:ISMOZA>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
OPTICAL ANISOTROPIES; GAAS;
Keywords:
metalorganic vapor phase epitaxy; reflectance anistropy spectroscopy; spectroscopic ellipsometry; ZnS/GaP; ZnSe/GaAs;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Meyne, C Tech Univ Berlin, Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Hardenbergstr 36 Berlin Germany D-10623 Germany
Citazione:
C. Meyne et al., "In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry", THIN SOL FI, 364(1-2), 2000, pp. 12-15

Abstract

Oxide desorption, homoepitaxial m-V buffer growth and the subsequent metalorganic vapor phase epitaxy of ZnS layers on GaP(001) and ZnSe layers on GaAs(001) were monitored in situ at 350 degrees C using reflectance anisotropy spectroscopy and spectroscopic ellipsometry. Thermal oxide desorption in a II-VI reactor without stabilization by a group V partial pressure leads to rough III-V substrate surfaces with a group VI termination. Application of a proper stabilization induces a well-defined c(4 X 4) and a (2 x 1) surface reconstruction on GaAs and GaP, respectively. Atomic force microscopy proves the formation of smooth surfaces with monoatomic steps. Growth of II-VI epilayers was started under various conditions. Anisotropies of the dielectric function that originate from the II-VI surface or from the buried II-VI/III-V interface were calculated from the reflectance spectra. The separated contribution of the interface to the dielectric anisotropy is distinctly affected by different growth starts particularly for ZnS epilayers on Gap. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/01/21 alle ore 03:47:00