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Titolo:
Effect of cooling rate on excimer laser crystallization of silicon thin films
Autore:
Tanabe, H;
Indirizzi:
NEC Corp Ltd, Funct Devices Res Labs, Tokyo, Japan NEC Corp Ltd Tokyo Japan Corp Ltd, Funct Devices Res Labs, Tokyo, Japan
Titolo Testata:
NEC RESEARCH & DEVELOPMENT
fascicolo: 2, volume: 41, anno: 2000,
pagine: 202 - 206
SICI:
0547-051X(200004)41:2<202:EOCROE>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
TFTS;
Keywords:
Thin Film Transistor (TFT); polycrystalline silicon (poly-Si); excimer laser; laser crystallization; excimer laser annealing (ELA); micro-crystallization; transient temperature; supercooling;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Tanabe, H NEC Corp Ltd, Funct Devices Res Labs, Tokyo, Japan NEC Corp LtdTokyo Japan Funct Devices Res Labs, Tokyo, Japan
Citazione:
H. Tanabe, "Effect of cooling rate on excimer laser crystallization of silicon thin films", NEC RES DEV, 41(2), 2000, pp. 202-206

Abstract

The cooling rate during excimer laser crystallization of amorphous silicon(a-Si) was estimated by using numerical transient-temperature simulation in order to investigate the transition to a nonequilibrium condition, which results in micro-crystallization. Since the simulation results for the cooling rate near the melting point of crystalline Si were not supported by thefindings of Scanning Electron Microscopy (SEM) observation, we focused on the maximum cooling rate during the crystallization. The maximum cooling rate increased monotonically with irradiation energy. The micro-crystallization occurred at more than a quenching rate of 1.6 x 10(10)degrees C/sec. According to this result, (micro-) crystalline Si should be micro-crystallizedat a higher energy density than that of the a-Si. The shift in energy density for micro-crystallization was also supported by the findings of the SEMstudy.

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Documento generato il 04/12/20 alle ore 13:24:49