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Titolo:
On the far- and near-field optical microscopy of microelectronics structures using second-harmonic and sum-frequency generation
Autore:
Zheltikov, AM; Ferrante, G; Zarcone, M;
Indirizzi:
Moscow MV Lomonosov State Univ, Fac Phys, Ctr Int Laser, Moscow 119899, Russia Moscow MV Lomonosov State Univ Moscow Russia 119899 oscow 119899, Russia Univ Palermo, Ist Nazl Fis Mat, Dipartimento Fis & Tecnol Relat, I-90128 Palermo, Italy Univ Palermo Palermo Italy I-90128 Tecnol Relat, I-90128 Palermo, Italy
Titolo Testata:
LASER PHYSICS
fascicolo: 2, volume: 10, anno: 2000,
pagine: 600 - 602
SICI:
1054-660X(200003/04)10:2<600:OTFANO>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED 2ND-HARMONIC GENERATION; SURFACE; ELECTROREFLECTANCE; SPECTROSCOPY; SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Zheltikov, AM Moscow MV Lomonosov State Univ, Fac Phys, Ctr Int Laser, Moscow 119899, Russia Moscow MV Lomonosov State Univ Moscow Russia 119899 Russia
Citazione:
A.M. Zheltikov et al., "On the far- and near-field optical microscopy of microelectronics structures using second-harmonic and sum-frequency generation", LASER PHYS, 10(2), 2000, pp. 600-602

Abstract

Nonlinear-optical wave-mixing processes, such as second-harmonic and sum-frequency generation, are shown to allow the implementation of high-resolution schemes of far- and near-field optical microscopy on technological microelectronics structures. A combination of far- and near-field microscopy with dc-field-induced nonlinear-optical processes is suggested as a means for high-resolution time-resolved imaging of spatial distributions of electric fields in silicon microelectronics structures.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/04/20 alle ore 02:35:41