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Titolo:
In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water
Autore:
Juppo, M; Rahtu, A; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 ab, FIN-00014 Helsinki, Finland
Titolo Testata:
LANGMUIR
fascicolo: 8, volume: 16, anno: 2000,
pagine: 4034 - 4039
SICI:
0743-7463(20000418)16:8<4034:ISMSSO>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; BINARY REACTION SEQUENCE; TANTALUM OXIDE; IN-SITU; SILICA SURFACES; GROWTH; EPITAXY; H2O; ALUMINA; CHEMISTRY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
37
Recensione:
Indirizzi per estratti:
Indirizzo: Juppo, M Univ Helsinki, Dept Chem, Inorgan Chem Lab, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 elsinki, Finland
Citazione:
M. Juppo et al., "In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water", LANGMUIR, 16(8), 2000, pp. 4034-4039

Abstract

The surface reactions between trimethylaluminum (TMA) and deuterated water(D2O) in the deposition of Al2O3 were studied by using a mass spectrometerto determine the amount of the reaction product, methane (CH3D), produced in a flow-type atomic layer deposition (ALD) reactor during each depositionstep. At low temperatures (<200 degrees C) more CH3D was produced during the TMA pulse whereas at;higher temperatures when the dehydroxylation is more extensive more CH3D was produced during the D2O pulse. Iri addition to the temperature, the hydroxyl coverage was also noticed to depend on the D2O dose, since D2O reacts with dehydroxylated alumina sites producing adsorbed-OD groups. According ed our results, which agree quite well with previousstudies carried out by other methods, the dehydroxylation of the alumina surface seems to play a key role in the surface chemistry of the atomic layer deposition of Al2O3.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 10:03:37