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Titolo:
Dopant diffusion during rapid thermal oxidation
Autore:
Stadler, A; Sulima, T; Schulze, J; Fink, C; Kottantharayil, A; Hansch, W; Baumgartner, H; Eisele, I; Lerch, W;
Indirizzi:
Univ Bundeswehr Munchen, Inst Phys, D-85577 Neubiberg, Germany Univ Bundeswehr Munchen Neubiberg Germany D-85577 577 Neubiberg, Germany STEAG RTP Syst GMBH, D-89160 Dornstadt, Germany STEAG RTP Syst GMBH Dornstadt Germany D-89160 D-89160 Dornstadt, Germany
Titolo Testata:
SOLID-STATE ELECTRONICS
fascicolo: 5, volume: 44, anno: 2000,
pagine: 831 - 835
SICI:
0038-1101(200005)44:5<831:DDDRTO>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Keywords:
molecular beam epitaxy (MBE); rapid thermal oxidation (RTO); temperature-budget induced diffusion (TID); oxidation enhanced diffusion (OED); secondary ion mass spectrometer (SIMS); metal-oxide-semiconductor structures (MOS-structures);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Stadler, A Univ Bundeswehr Munchen, Inst Phys, Werner Heisenberg Weg 39, D-85577 Neubiberg, Germany Univ Bundeswehr Munchen Werner Heisenberg Weg 39 Neubiberg Germany D-85577
Citazione:
A. Stadler et al., "Dopant diffusion during rapid thermal oxidation", SOL ST ELEC, 44(5), 2000, pp. 831-835

Abstract

Rapid thermal processing (RTP) is of increasing interest in silicon mainstream technology providing reduced thermal budget. In this paper the dopant diffusion behaviour during rapid thermal oxidation (RTO) is investigated, in particular the oxidation enhanced diffusion (OED). For diffusion monitoring, samples were fabricated by means of molecular beam epitaxy (MBE) to create sharp doping profiles with nanometer resolution. After various RTO treatments (dry and wet oxide) resulting in an ellipsometric measured oxide thickness of 5 nm, the distribution of dopants was analysed by secondary ion mass spectroscopy (SIMS) and compared with standard thermal processes. Metal-oxide-semiconductor structures (MOS-structures) were fabricated for electrical characterisation, It turns out that for a low thermal budget and minimised OED only wet RTO is feasible.(C) 2000 Published by Elsevier Science Ltd. All rights reserved.

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Documento generato il 29/09/20 alle ore 20:22:29