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Titolo:
Atomic layer deposition of oxide thin films with metal alkoxides as oxygensources
Autore:
Ritala, M; Kukli, K; Rahtu, A; Raisanen, PI; Leskela, M; Sajavaara, T; Keinonen, J;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland Univ HelsinkiHelsinki Finland FIN-00014 ab, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
SCIENCE
fascicolo: 5464, volume: 288, anno: 2000,
pagine: 319 - 321
SICI:
0036-8075(20000414)288:5464<319:ALDOOT>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Agriculture,Biology & Environmental Sciences
Life Sciences
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Ritala, M Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 lsinki, Finland
Citazione:
M. Ritala et al., "Atomic layer deposition of oxide thin films with metal alkoxides as oxygensources", SCIENCE, 288(5464), 2000, pp. 319-321

Abstract

A chemical approach to atomic Layer deposition (ALD) of oxide thin films is reported here. Instead of using water or other compounds for an oxygen source, oxygen is obtained from a metal alkoxide, which serves as both an oxygen and a metal source when it reacts with another metal compound such as ametal chloride or a metal alkyl. These reactions generally enable deposition of oxides of many metals. With this approach, an alumina film has been deposited on silicon without creating an interfacial silicon oxide Layer that otherwise forms easily. This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 23:48:38