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Titolo:
Epitaxial relationship in the AlN/Si(001) heterosystem
Autore:
Lebedev, V; Jinschek, J; Kaiser, U; Schroter, B; Richter, W; Krausslich, J;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany Univ Jena, Inst Opt & Quantumelektron, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 & Quantumelektron, D-07743 Jena, Germany
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 15, volume: 76, anno: 2000,
pagine: 2029 - 2031
SICI:
0003-6951(20000410)76:15<2029:ERITAH>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Lebedev, V Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 perphys, D-07743 Jena, Germany
Citazione:
V. Lebedev et al., "Epitaxial relationship in the AlN/Si(001) heterosystem", APPL PHYS L, 76(15), 2000, pp. 2029-2031

Abstract

The epitaxial growth of crystalline wurtzite AlN thin films on (001) Si substrates by plasma-assisted molecular-beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. Cross-sectional transmission electron microscopyand x-ray diffraction investigations revealed a two-domain film structure (AlN1 and AlN2) with a 30 degrees rotation between neighboring domain orientations and an epitaxial orientation relationship of [0001]AlN parallel to[001]Si and [01(1) over bar 0]AlN(1)parallel to[(2) over bar 110]AlN(2)parallel to[110]Si. A model for the nucleation and growth mechanism of 2H-AlN layers on Si(001) is proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)03915-2].

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Documento generato il 28/09/20 alle ore 15:12:48