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Titolo:
Investigation of thermal recovery behavior in hydrogen-implanted SrTiO3 using high energy ion beam techniques
Autore:
Thevuthasan, S; Jiang, W; Young, JS; Weber, WJ;
Indirizzi:
Battelle Mem Inst, Pacific NW Labs, Environm Mol Sci Lab, Richland, WA 99352 USA Battelle Mem Inst Richland WA USA 99352 l Sci Lab, Richland, WA 99352 USA
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 161, anno: 2000,
pagine: 544 - 548
SICI:
0168-583X(200003)161:<544:IOTRBI>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXIAL RECRYSTALLIZATION; AMORPHIZED SRTIO3;
Keywords:
ion scattering; Rutherford backscattering spectrometry (RBS); nuclear reaction analysis (NRA); radiation effects; damage accumulation; strontium titanate (SrTiO3); hydrogen;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Thevuthasan, S Battelle Mem Inst, Pacific NW Labs, Environm Mol Sci Lab, POB 999,MSIN K8-93, Richland, WA 99352 USA Battelle Mem Inst POB 999,MSIN K8-93 Richland WA USA 99352
Citazione:
S. Thevuthasan et al., "Investigation of thermal recovery behavior in hydrogen-implanted SrTiO3 using high energy ion beam techniques", NUCL INST B, 161, 2000, pp. 544-548

Abstract

Damage accumulation, recovery process, and the influence of hydrogen on the recovery process have been investigated in single crystal SrTiO3 irradiated with low-energy (40 keV) H+ using in-situ hydrogen nuclear reaction analysis (NRA) and Rutherford backscattering spectrometry/channeling (RBS/C) techniques. Samples were irradiated at a temperature of 120 It with ion fluences of 5.0 x 10(16) and 1.0 x 10(17) H+/cm(2). For annealing temperatures up to similar to 470 K, isochronal annealing results indicate increasing disorder on the Sr, Ti, and O sublattices with temperature in the vicinity of the implanted hydrogen for low fluences of 5.0 x 10(16) H+/cm(2). Annealingthis sample above 570 K. resulted in the cleavage of the entire irradiatedsurface. On-the-other-hand, high-temperature isochronal annealing results for 1.0 x 10(17) H+/cm(2) fluence show an increase in the backscattering yield across the penetration depth of the implant hydrogen due to the formation of hydrogen blisters. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 22/01/20 alle ore 06:59:45