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Titolo:
Deuterium channeling analysis for He+-implanted 6H-SiC
Autore:
Jiang, W; Thevuthasan, S; Weber, WJ; Grotzschel, R;
Indirizzi:
Battelle Mem Inst, Pacific NW Labs, Richland, WA 99352 USA Battelle Mem Inst Richland WA USA 99352 c NW Labs, Richland, WA 99352 USA Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany Rossendorf Inc Dresden Germany D-01314 dorf EV, D-01314 Dresden, Germany
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 161, anno: 2000,
pagine: 501 - 504
SICI:
0168-583X(200003)161:<501:DCAFH6>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
ACCUMULATION; DAMAGE;
Keywords:
RBS and NRA/channeling; ion-beam-induced damage; damage recovery; 6H-SiC;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, W Battelle Mem Inst, Pacific NW Labs, POB 999,MS K8-93,902 BattelleBlvd, Richland, WA 99352 USA Battelle Mem Inst POB 999,MS K8-93,902 Battelle Blvd Richland WA USA 99352
Citazione:
W. Jiang et al., "Deuterium channeling analysis for He+-implanted 6H-SiC", NUCL INST B, 161, 2000, pp. 501-504

Abstract

Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both sublattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smallerC displacement energy. Above an ion fluence of 1.0 x 10(16) He+/cm(2), more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 x 10(16) He+/cm(2)), exhibits an epitaxial growth rate of similar to 0.154 nm/K in the temperature range 370-870 K. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 20/01/20 alle ore 07:22:09