Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma
Autore:
Furukawa, K; Gao, DW; Nakashima, H; Ijiri, H; Uchino, K; Muraoka, K;
Indirizzi:
Kyushu Univ, Adv Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 , Kasuga, Fukuoka 8168580, Japan Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580,Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 i, Kasuga, Fukuoka 8168580,Japan
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 2-3, volume: 72, anno: 2000,
pagine: 128 - 131
SICI:
0921-5107(20000315)72:2-3<128:VOPEOD>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
CYCLOTRON-RESONANCE PLASMA; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Furukawa, K Kyushu Univ, Adv Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 kuoka 8168580, Japan
Citazione:
K. Furukawa et al., "Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma", MAT SCI E B, 72(2-3), 2000, pp. 128-131

Abstract

We have succeeded in preparing thin Si oxide films having a thickness of 9nm and a breakdown field greater than 8 MV/cm at low temperatures. These films were prepared by a method of combining plasma preoxidation and subsequent sputter deposition using a sputtering-type ECR plasma system. In this study, the effect of the initial plasma preoxidation process was verified bycomparing the structural characteristics of the films with and without this process. The chemical etch rate measurements and X-ray photoelectron spectroscopy suggested that well-controlled film structure in the range of 1.3-3 nm from Si substrates was of primary importance for the high breakdown characteristics of the films prepared with the combined method. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/21 alle ore 02:50:35