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Titolo:
MBE growth kinetics of Si on heavily-doped Si(111): P: a self-surfactant
Autore:
Fissel, A; Richter, W;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 1-3, volume: 73, anno: 2000,
pagine: 163 - 167
SICI:
0921-5107(20000403)73:1-3<163:MGKOSO>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; MEDIATED EPITAXY; THIN-FILMS; NUCLEATION; PHOSPHORUS; SILICON;
Keywords:
doping; growth kinetics; molecular beam epitaxy; reflection high-energy electron diffraction; silicon;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Fissel, A Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 7743 Jena, Germany
Citazione:
A. Fissel e W. Richter, "MBE growth kinetics of Si on heavily-doped Si(111): P: a self-surfactant", MAT SCI E B, 73(1-3), 2000, pp. 163-167

Abstract

The influence of heavily-doped substrates on the homoepitaxial growth kinetics of Si on Si(111) is studied in real time by means of reflection high-energy electron diffraction as function of temperature and growth rate. The growth experiments were performed by means of molecular beam epitaxy, The obtained results were compared with the growth kinetics on undoped substrates within the framework of nucleation theory. It was found that in comparison with undoped Si(111), the nucleus density in the case of Si(111):P is significantly increased at the same growth conditions that can be attributed to a longer lifetime of the smallest stable islands consisting of a Si pair on the Si(111):P surface. It can be concluded, therefore, that phosphorus is always present on the growing surface during high-temperature preparationof heavily P-doped Si(111). There, the phosphorus atoms saturate dangling bonds at the island edges. For further island growth, phosphorus atoms haveto be displayed before silicon adatoms can be incorporated into the islandedges, demanding an additional energy. In this sense, phosphorus acts as asurfactant. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/01/21 alle ore 02:26:28