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Titolo:
Cross-sectional TEM investigations of the influence of P+ ions implanted in the Si substrate on the atomic interdiffusion in the Cr-Si system
Autore:
Mirouh, K; Bouabellou, A; Halimi, R; Mosser, A; Ehret, G; Werckman, J;
Indirizzi:
Univ Mentouri Constantine, Unit Rech Phys, Constantine 25000, Algeria UnivMentouri Constantine Constantine Algeria 25000 ntine 25000, Algeria GSI, IPCMS, F-67037 Strasbourg, France GSI Strasbourg France F-67037GSI, IPCMS, F-67037 Strasbourg, France
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 1-3, volume: 73, anno: 2000,
pagine: 116 - 119
SICI:
0921-5107(20000403)73:1-3<116:CTIOTI>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
CRSI2; SI(100); GROWTH;
Keywords:
implanted silicon; transmission electron microscopy; chromium silicide; interface; thin films;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Mirouh, K Univ Mentouri Constantine, Unit Rech Phys, Constantine 25000, Algeria Univ Mentouri Constantine Constantine Algeria 25000 0, Algeria
Citazione:
K. Mirouh et al., "Cross-sectional TEM investigations of the influence of P+ ions implanted in the Si substrate on the atomic interdiffusion in the Cr-Si system", MAT SCI E B, 73(1-3), 2000, pp. 116-119

Abstract

Cross-sectional transmission electron microscopy was used to study the effect of doped silicon substrate on the formation of CrSi2 disilicide. A chromium film 800 Angstrom thick was electron gun deposited onto unimplanted and phosphorus implanted Si(111) substrates. The implanted dose was 5 x 10(15) at. cm(-2) at 30 keV. The Cr-Si samples were heat treated in vacuum at 475 degrees C for different times. Transmission electron microscopy investigations, performed on doped and undoped Si substrates, have shown that the presence of P+ ions resulted in the delay of the CrSi2 compound growth. In addition, the nanoanalysis of the samples with P+ implanted silicon has revealed the apparition of a crystalline Si-Cr alloy in the Si substrate near the CrSi2-Si interface, the formation of an amorphous Si thin layer between the formed silicide and this alloy, and a diffusion of Si atoms towards the free surface. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/11/20 alle ore 14:11:54