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Titolo:
Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor
Autore:
Jeong, JK; Na, HJ; Choi, J; Hwang, CS; Kim, HJ; Bahng, W;
Indirizzi:
Seoul Natl Univ, Sch Mat Sci & Engn, Kwanak Ku, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 k Ku, Seoul 151742, South Korea Electrotech Lab, Div Mat Sci, Tsukuba, Ibaraki 305, Japan Electrotech LabTsukuba Ibaraki Japan 305 ci, Tsukuba, Ibaraki 305, Japan
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 4, volume: 210, anno: 2000,
pagine: 629 - 636
SICI:
0022-0248(200003)210:4<629:HGO6TF>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
DEVICES;
Keywords:
6H-SiC; homoepitaxy; MOCVD; step-controlled epitaxy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, HJ Seoul Natl Univ, Sch Mat Sci & Engn, Kwanak Ku, San 56-1,Shillim Dong, Seoul 151742, South Korea Seoul Natl Univ San 56-1,Shillim Dong SeoulSouth Korea 151742 ea
Citazione:
J.K. Jeong et al., "Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor", J CRYST GR, 210(4), 2000, pp. 629-636

Abstract

Homoepitaxial silicon carbide (SiC) films were grown on 3.5 degrees off-oriented (0 0 0 1) 6H-SiC by metal-organic chemical vapor deposition (MOCVD) using bis-trimethylsilylmethane (BTMSM, C7H20Si2). A pronounced effect of the growth conditions such as source flow rate and growth temperature on thepolytype formation and structural imperfection of the epilayer was observed. The growth behavior was explained by a step controlled epitaxy model. Itwas demonstrated by high-resolution X-ray diffractometry and transmission electron microscopy that high-quality 6H-SiC thin films were successfully grown at the optimized growth condition of substrate temperature 1440 degrees C with the carrier gas flow rate of 10 sccm. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 01/04/20 alle ore 20:50:47