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Titolo:
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures
Autore:
Wetzel, C; Takeuchi, T; Amano, H; Akasaki, I;
Indirizzi:
Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ Nagoya Aichi Japan 4688502 ku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ Nagoya Aichi Japan 4688502 ku Ku, Nagoya, Aichi 4688502, Japan
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 3, volume: 61, anno: 2000,
pagine: 2159 - 2163
SICI:
1098-0121(20000115)61:3<2159:ESPDAM>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAN; SPECTROSCOPY; SEMICONDUCTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Wetzel, C Meijo Univ, High Tech Res Ctr, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan Meijo Univ 1-501 Shiogamaguchi Nagoya Aichi Japan 4688502 Japan
Citazione:
C. Wetzel et al., "Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures", PHYS REV B, 61(3), 2000, pp. 2159-2163

Abstract

The piezoelectric properties of Ga1-xInxN/GaN multiple quantum well structures are analyzed in two sets of samples covering the composition range of 0<x<0.2 and well widths 23 Angstrom less than or equal to L(z)less than or equal to 130 Angstrom. In photoreflection spectroscopy we observe Franz-Keldysh oscillations near the barrier band-gap energy and directly derive hugeelectric field values in the range of 0.23-0.90 MV/cm. The field scales with composition and strain. The onset of Franz-Keldysh oscillations marks a three-dimensional critical point that tunes with the electric field and well width. It is found to correspond to a direct interband transition betweencontinuum states controlled in energy by the polarization dipole, i.e., the product of the polarization field and well width. By variation of the composition alone the level can be tuned over a large energy range from 3.15 to 3.37 eV. This correspondence provides a direct means to accurately determine the properties of such polarization controlled systems.

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Documento generato il 16/07/20 alle ore 19:02:32