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Titolo:
Optical characterization of indium-terminated GaAs(001) surfaces
Autore:
Goletti, C; Springer, C; Resch-Esser, U; Esser, N; Richter, W; Fimland, BO;
Indirizzi:
Univ Rome Tor Vergata, Dept Phys, Rome, Italy Univ Rome Tor Vergata RomeItaly me Tor Vergata, Dept Phys, Rome, Italy Univ Rome Tor Vergata, Inst Nazl Fis Mat, Rome, Italy Univ Rome Tor Vergata Rome Italy ergata, Inst Nazl Fis Mat, Rome, Italy Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany Tech Univ Berlin Berlin Germany D-1000 orperphys, D-1000 Berlin, Germany Norwegian Inst Technol, Dept Phys Elect, N-7034 Trondheim, Norway Norwegian Inst Technol Trondheim Norway N-7034 N-7034 Trondheim, Norway
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 3, volume: 61, anno: 2000,
pagine: 1681 - 1684
SICI:
1098-0121(20000115)61:3<1681:OCOIGS>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE-DIFFERENCE SPECTROSCOPY; 001 GAAS; GAAS(100); ANISOTROPY; GROWTH; RECONSTRUCTIONS; PHOTOEMISSION; OVERLAYERS; MORPHOLOGY; DESORPTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Goletti, C Univ Rome Tor Vergata, Dept Phys, Rome, Italy Univ Rome Tor Vergata Rome Italy ata, Dept Phys, Rome, Italy
Citazione:
C. Goletti et al., "Optical characterization of indium-terminated GaAs(001) surfaces", PHYS REV B, 61(3), 2000, pp. 1681-1684

Abstract

We have investigated the growth of thin indium layers on As- and Ga-terminated GaAs(001) surfaces by reflectance anisotropy spectroscopy (RAS), low energy electron diffraction (LEED), and auger electron spectroscopy. Room temperature deposition of indium on the (2 X 4)/c(2 X 8) surface and subsequent annealing at 450 degrees C leads to the formation of an In-terminated surface showing a (4X2) LEED pattern, accompanied with strong changes in the measured surface optical anisotropy. When indium is deposited onto the (4X2)/c(8 X2) surface, on the contrary, the (4X2) In-terminated surface is already formed at room temperature deposition without needing annealing, as demonstrated by the RAS spectra. The finding that almost identical RAS spectraand (4X2) LEED patterns are obtained in both cases shows that the same final atomic structure is achieved. Finally, we conclude that the structure ofthe In-terminated surface is similar to that of the clean Ga-rich surface,although a more detailed model would need accurate calculations of the microscopic origin of the measured anisotropy.

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Documento generato il 18/01/21 alle ore 16:05:58