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Titolo:
A probe detector for defectivity assessment in p-n junctions
Autore:
Zanchi, A; Zappa, F; Ghioni, M;
Indirizzi:
Politecn Milan, Dept Elect & Informat, I-20133 Milan, Italy Politecn Milan Milan Italy I-20133 lect & Informat, I-20133 Milan, Italy
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 3, volume: 47, anno: 2000,
pagine: 609 - 616
SICI:
0018-9383(200003)47:3<609:APDFDA>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
AVALANCHE PHOTODIODE ARRAYS; PHOTON DETECTION; SILICON; OXIDATION; DIFFUSION; NOISE;
Keywords:
gettering; integrated circuit manufacture; manufacturing testing; p-n junctions; semiconductor device fabrication;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Zanchi, A Politecn Milan, Dept Elect & Informat, I-20133 Milan, Italy Politecn Milan Milan Italy I-20133 ormat, I-20133 Milan, Italy
Citazione:
A. Zanchi et al., "A probe detector for defectivity assessment in p-n junctions", IEEE DEVICE, 47(3), 2000, pp. 609-616

Abstract

In this paper, we present a process probe capable of measuring the avalanche ignition rate of the generation centers, in order to investigate some process-dependent morphological properties of p-n junctions. In particular, we report a nonlinear dependence of the defectivity with the area of circular junctions, which can be ascribed to a radially growing density of generation centers, like dopant clusters. This hypothesis has been verified by means of both microscopic inspection of the probes and comparison with alternative probe geometries. Technological hints are finally provided to counteract the defectivity, thus leading to potential improvements in the fabrication of microelectronic devices.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 21:16:05