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Titolo:
Synchrotron X-ray diffraction evidence for native defects in the photovoltaic semiconductor CuInSe2
Autore:
Kaplan, L; Leitus, G; Lyakhovitskaya, V; Frolow, F; Hallak, H; Kvick, A; Cahen, D;
Indirizzi:
Weizmann Inst Sci, IL-76100 Rehovot, Israel Weizmann Inst Sci Rehovot Israel IL-76100 Sci, IL-76100 Rehovot, Israel Tel Aviv Univ, IL-69978 Tel Aviv, Israel Tel Aviv Univ Tel Aviv Israel IL-69978 v Univ, IL-69978 Tel Aviv, Israel Bethlehem Univ, Bethlehem, Israel Bethlehem Univ Bethlehem IsraelBethlehem Univ, Bethlehem, Israel European Synchrotron Radiat Facil, F-38043 Grenoble, France European Synchrotron Radiat Facil Grenoble France F-38043 enoble, France
Titolo Testata:
ADVANCED MATERIALS
fascicolo: 5, volume: 12, anno: 2000,
pagine: 366 -
SICI:
0935-9648(20000302)12:5<366:SXDEFN>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
HORIZONTAL BRIDGMAN METHOD; CHALCOPYRITE SEMICONDUCTORS; POSITRON LIFETIME; CRYSTALS; CU;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
32
Recensione:
Indirizzi per estratti:
Indirizzo: Cahen, D Weizmann Inst Sci, IL-76100 Rehovot, Israel Weizmann Inst Sci Rehovot Israel IL-76100 76100 Rehovot, Israel
Citazione:
L. Kaplan et al., "Synchrotron X-ray diffraction evidence for native defects in the photovoltaic semiconductor CuInSe2", ADVAN MATER, 12(5), 2000, pp. 366

Abstract

CuInSe2 is a semiconductor used in solar cells that has appreciable Cu ionconductivity. These authors have used 0.25 Angstrom synchrotron X-radiation to analyze its structure. It is shown that the application of a strong electric field leads to a decrease in electron density on the Cu sites, whichsheds light on the role of Cu electromigration in transistor formation (see Figure) and in the photovoltaic activity of CuInSe2.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/03/20 alle ore 12:17:45