Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Direct wafer bonding and layer transfer for ferroelectric thin film integration
Autore:
Alexe, M; Senz, S; Pignolet, A; Hesse, D; Gosele, U;
Indirizzi:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 20 Halle, Germany
Titolo Testata:
INTEGRATED FERROELECTRICS
fascicolo: 1-4, volume: 27, anno: 1999,
pagine: 1249 - 1255
SICI:
1058-4587(1999)27:1-4<1249:DWBALT>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; HETEROSTRUCTURES; TRANSISTORS; OXIDES;
Keywords:
layer transfer; direct wafer bonding; metal-ferroelectric-silicon structures; interface trap density;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Alexe, M Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 Germany
Citazione:
M. Alexe et al., "Direct wafer bonding and layer transfer for ferroelectric thin film integration", INTEGR FERR, 27(1-4), 1999, pp. 1249-1255

Abstract

A novel fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding (DWB) and layer transfer is proposed. Metal-ferroelectric-silicon (MFS) structures were fabricated by both layer transfer process and direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. Interface trap measurements show a large difference for MFS structures fabricated by bonding or by direct deposition, respectively. The trap density values were ranging from 2x10(12) cm(-2)eV(-1) for SBT/Si directly deposited to 4x10(11) cm(-2)eV(-1) for SBT/Si bonded interfaces.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/09/20 alle ore 11:16:22