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Titolo:
Two-phase boosted voltage generator for low-voltage giga-bit DRAMs
Autore:
Kim, YH; Nam, JK; Lee, SH; Park, HJ; Choi, JS; Park, CS; Ahn, SH; Chung, JY;
Indirizzi:
Pohang Univ Sci & Technol, VLSI Syst Lab, Pohang, South Korea Pohang Univ Sci & Technol Pohang South Korea t Lab, Pohang, South Korea Hyundai Elect Ind Co Ltd, Icheon, South Korea Hyundai Elect Ind Co Ltd Icheon South Korea Co Ltd, Icheon, South Korea
Titolo Testata:
IEICE TRANSACTIONS ON ELECTRONICS
fascicolo: 2, volume: E83C, anno: 2000,
pagine: 266 - 269
SICI:
0916-8524(200002)E83C:2<266:TBVGFL>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Keywords:
boosted voltage generator; low voltage; giga-bit DRAMs; charge pump;
Tipo documento:
Letter
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
3
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, YH Pohang Univ Sci & Technol, VLSI Syst Lab, Pohang, South Korea Pohang Univ Sci & Technol Pohang South Korea ohang, South Korea
Citazione:
Y.H. Kim et al., "Two-phase boosted voltage generator for low-voltage giga-bit DRAMs", IEICE TR EL, E83C(2), 2000, pp. 266-269

Abstract

A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V-TN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V-TN respectively. Also the pumping current was increased in the new circuit.

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Documento generato il 26/01/20 alle ore 16:06:54