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Titolo:
Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations
Autore:
Kim, DM; Song, SH; Baek, KH; Kim, DJ; Kim, HJ;
Indirizzi:
Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea Kookmin Univ Seoul South Korea 136702 ct Engn, Seoul 136702, South Korea Samsung Elect, Kyungki 449900, South Korea Samsung Elect Kyungki South Korea 449900 ct, Kyungki 449900, South Korea Korea Adv Inst Sci & Technol, Photon Res Ctr, Seoul 130760, South Korea Korea Adv Inst Sci & Technol Seoul South Korea 130760 30760, South Korea
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 3, volume: 21, anno: 2000,
pagine: 93 - 96
SICI:
0741-3106(200003)21:3<93:MCOAPH>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
MODFETS; HEMT;
Keywords:
cut-off frequency; HEMT; microwave; photonics; optical control;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, DM Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea Kookmin Univ Seoul South Korea 136702 Seoul 136702, South Korea
Citazione:
D.M. Kim et al., "Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations", IEEE ELEC D, 21(3), 2000, pp. 93-96

Abstract

Comprehensive P-opt-, V-GS-, and V-DS-dependent variations of microwave performances (f(T) and f(max)) in a PHEMT under electro-optical stimulation are reported for the first time. Under low P-opt, microwave characteristics are observed to be predominantly modulated by the photoconductive effect through the transconductance, Under high optical power, however, they are limited by the photovoltaic effect through the gate capacitance and a parasitic MESFET activated parallel to the In0.13Ga0.87As channel PHEMT, Contrary to the dc current-voltage (I-V) characteristics, which are predominantly controlled by the photoconductive effect with a strong nonlinearity due to a parallel conduction, microwave characteristics strongly depend on the photovoltaic effect as well as the photoconductive effect under electro-optical stimulation. An extended small-signal photonic-microwave model is suggested for better description of PHEMT's under electro-optical stimulations.

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Documento generato il 05/12/20 alle ore 02:06:32