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Titolo:
Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si : H p-i-n solar cell
Autore:
Prentice, JSC;
Indirizzi:
Rand Afrikaans Univ, Dept Phys, ZA-2006 Auckland Pk, South Africa Rand Afrikaans Univ Auckland Pk South Africa ZA-2006 nd Pk, South Africa
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 3, volume: 61, anno: 2000,
pagine: 287 - 300
SICI:
0927-0248(20000315)61:3<287:CSOTEO>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; RECOMBINATION COEFFICIENT; TEMPERATURE-DEPENDENCE; DEFECTS; MODEL; PERFORMANCE; STATES; DENSITY;
Keywords:
a-Si : H; simulation; intrinsic layer; phosphorous;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
51
Recensione:
Indirizzi per estratti:
Indirizzo: Prentice, JSC Rand Afrikaans Univ, Dept Phys, POB 524, ZA-2006 Auckland Pk, South Africa Rand Afrikaans Univ POB 524 Auckland Pk South Africa ZA-2006
Citazione:
J.S.C. Prentice, "Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si : H p-i-n solar cell", SOL EN MAT, 61(3), 2000, pp. 287-300

Abstract

The simulation RAUPV2 has been used to model a thin-film a-Si:H p-i-n solar cell, fabricated at the Rand Afrikaans University. For a physically acceptable set of input parameters, the simulated J-V curve agrees very well with the empirical J-V curve, under AM1.5 g illumination. The effect of boron-and phosphorous doping of the i-layer (B- and P-profiling) was studied. Itwas found that boron doping of the i-layer greatly reduced cell performance. On the other hand, there seemed to be an optimal phosphorous concentration in the i-layer, P-opt, for which cell performance, measured in terms of maximum power output, was a maximum. It was observed that as the P concentration in the i-layer was increased towards P-opt, the recombination rate inthe front of the i-layer decreased, whilst that in the back part of the i-layer increased. The short-circuit current was seen to decrease under P-profiling. It was seen that as a consequence of P-profiling, the drift field in the back part of the i-layer was relatively insensitive to the effect of an applied voltage, for applied voltages up to about 0.55 V. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 26/11/20 alle ore 11:22:20