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Titolo:
Si (001) surface defects after extended high temperature annealing
Autore:
Barge, D; Joly, JP; Rolland, G; Pichaud, B;
Indirizzi:
CEA, LETI, Dept Microtechnol, F-38054 Grenoble, France CEA Grenoble France F-38054 Dept Microtechnol, F-38054 Grenoble, France CEA, LETI, Dept Optron, F-38054 Grenoble, France CEA Grenoble France F-38054 LETI, Dept Optron, F-38054 Grenoble, France Fac Sci & Tech St Jerome, MATOP, F-13397 Marseille, France Fac Sci & Tech St Jerome Marseille France F-13397 3397 Marseille, France
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
, volume: 71, anno: 2000,
pagine: 276 - 281
SICI:
0921-5107(20000214)71:<276:S(SDAE>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI(001);
Keywords:
Si; annealing; 001-surface; defects; metallic impurities; step bunching;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Barge, D CEA, LETI, Dept Microtechnol, 17 Rue Martyrs, F-38054 Grenoble, France CEA 17 Rue Martyrs Grenoble France F-38054 8054 Grenoble, France
Citazione:
D. Barge et al., "Si (001) surface defects after extended high temperature annealing", MAT SCI E B, 71, 2000, pp. 276-281

Abstract

Deep diffusion of dopants in Si 001 requires temperature annealing as highas 1250 degrees C and more for several days, in a quasi-neutral atmosphere. We have shown that such thermal treatment strongly affects the surface morphology, creating several-micrometers long, 10-50 nm deep square-shaped pits faceted along the 110 directions, with a density of similar to 10 defects/cm(2) for a 50-h anneal. These kind of defects, although reported in the literature for different experimental conditions, have not been studied in details. These defects grow as the annealing time increases. A second annealing in similar conditions shows a striking difference of behavior between CZ- and FZ-grown wafers, the latter having a defect density rising up to 10(4)/cm(2). It is believed: that: the metallic contaminants accumulated during the first annealing precipitate during cooling and eventually dissolve during further thermal treatment, leaving small marks on the surface which grow to micron-sized squares via a surface reconstruction. Comparisons have been made between the evolution of these defects and patterns with various depths followed, by a high-temperature annealing. (C) 2000 Elsevier ScienceS.A. All rights reserved.

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Documento generato il 03/07/20 alle ore 01:24:27