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Titolo:
Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films
Autore:
Suh, YS; Park, DG; Jang, SA; Lee, SH; Kim, TK; Yeo, IS; Kim, SD; Kim, CT;
Indirizzi:
Hyundai Elect Ind, Mem Res & Dev Div, Ichon Si 467701, Kyoungki Do, South Korea Hyundai Elect Ind Ichon Si Kyoungki Do South Korea 467701 Do, South Korea
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 6, volume: 87, anno: 2000,
pagine: 2760 - 2764
SICI:
0021-8979(20000315)87:6<2760:RCTASA>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE; DEGRADATION; SILICIDES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Suh, YS Hyundai Elect Ind, Mem Res & Dev Div, Inchon POB 1010, Ichon Si 467701, Kyoungki Do, South Korea Hyundai Elect Ind Inchon POB 1010 Ichon Si Kyoungki Do South Korea 467701
Citazione:
Y.S. Suh et al., "Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films", J APPL PHYS, 87(6), 2000, pp. 2760-2764

Abstract

We report the effects of excess Si phase on the C54 transformation and thethermal stability of TiSi2 thin films as a function of Si/Ti (x) ratio. The resistivity and x-ray diffraction data of TiSix(x = 2.1-2.4) films showeda retardation of C54-TiSi2 transformation with incremental molar ratio x; the TiSix (x = 2.1-2.3) films were completely transformed to C54-TiSi2 withrapid thermal annealing (RTA) of 750 degrees C, while the TiSix (x = 2.4) films were transmuted to C54-TiSi2 over the RTA of 800 degrees C. Transmission electron microscopy study revealed that the growth of Si precipitates in the Si-rich TiSix films competes with the grain growth during the transformation of C49 to C54 TiSi2 phase, resulting in the increase of C54 transformation temperature. An excellent sheet resistance (R-s) and its standard deviation in concert with a reliable gate oxide integrity were attained fromthe Si-rich TiSi2/polycrystalline-Si (poly-Si) structure up to the solid state annealing of 850 degrees C for 60 min. These attributes are due to thereduced solid state reaction at TiSi2/Si interface and the suppressed TiSi2 agglomeration by Si precipitates. The average R-s of the 0.12-mu m-wide TiSi2(800 Angstrom)/poly-Si gate lines is lower than 4.5 Omega/square, demonstrating a robust gate electrode structure for gigabit scale device application. (C) 2000 American Institute of Physics. [S0021-8979(00)01106-3].

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Documento generato il 02/04/20 alle ore 00:13:56