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Titolo:
Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing
Autore:
Cheng, HC; Huang, CY; Wang, FS; Lin, KH; Tarntair, FG;
Indirizzi:
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan Natl Chiao TungUniv Hsinchu Taiwan 300 Elect Engn, Hsinchu 300, Taiwan Natl Chiao Tung Univ, Inst Elect, Semicond Res Ctr, Hsinchu 300, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan 300 ond Res Ctr, Hsinchu 300, Taiwan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 1AB, volume: 39, anno: 2000,
pagine: L19 - L21
SICI:
0021-4922(20000115)39:1AB<L19:TTWPSF>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-SILICON; CRYSTALLIZATION; TFTS;
Keywords:
SPC; RTA; CFA; poly-Si TFTs; two-step RTA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Cheng, HC Natl Chiao Tung Univ, Dept Elect Engn, 1001 Ts Hsueh Rd, Hsinchu300, Taiwan Natl Chiao Tung Univ 1001 Ts Hsueh Rd Hsinchu Taiwan 300 Taiwan
Citazione:
H.C. Cheng et al., "Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing", JPN J A P 2, 39(1AB), 2000, pp. L19-L21

Abstract

A novel two-step rapid thermal annealing (RTA) process has been developed to significantly reduce the crystallization time for the solid-phase crystallization (SPC) of amorphous silicon films. In comparison with the conventional SPC processes, it not only keeps a low thermal budget but also achieves a larger poly-Si film grain size than that obtained by one-step RTA, and even as large as that obtained by conventional furnace annealing (CFA). Furthermore, poly-Si thin-film transistors fabricated by such a novel annealing scheme possess electrical characteristics superior to those obtained by one-step RTA and comparable to those obtained by long-time CFA.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 13:31:52