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Titolo:
Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As
Autore:
Haneda, S; Yamaura, M; Takatani, Y; Hara, K; Harigae, S; Munekata, H;
Indirizzi:
Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol Yokohama Kanagawa Japan 2268503 anagawa 2268503, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 1AB, volume: 39, anno: 2000,
pagine: L9 - L12
SICI:
0021-4922(20000115)39:1AB<L9:PACOFI>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM-EPITAXY; HETEROSTRUCTURES; GAAS;
Keywords:
III-V compound semiconductor; diluted magnetic semiconductor; iron; molecular beam epitaxy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Haneda, S Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, 4259 Nagatsuda, Yokohama, Kanagawa 2268503, Japan Tokyo Inst Technol 4259 Nagatsuda Yokohama Kanagawa Japan 2268503
Citazione:
S. Haneda et al., "Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As", JPN J A P 2, 39(1AB), 2000, pp. L9-L12

Abstract

The Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As,has been grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature T-s rangirig from 260-350 degrees C, Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga1-xFexAs. X-ray diffraction data have indicated that the lattice constant of Ga1-xFexAs decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMScan be changed significantly by the choice of transition metals.

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Documento generato il 29/09/20 alle ore 16:25:05