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Titolo:
Control of nucleation and solidification direction of polycrystalline silicon by excimer laser irradiation
Autore:
Hara, A; Sasaki, N;
Indirizzi:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd AtsugiKanagawa Japan 2430197 i, Kanagawa 2430197, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 1AB, volume: 39, anno: 2000,
pagine: L1 - L4
SICI:
0021-4922(20000115)39:1AB<L1:CONASD>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM TRANSISTORS; CRYSTALLIZATION METHOD; GRAIN-SIZE; PRECIPITATION; ENLARGEMENT; TFTS;
Keywords:
polycrystalline silicon; poly-silicon; poly-Si; silicon; Si; thin film transistor; TFT; excimer laser; grain; grain boundary; XeCl;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Hara, A Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd 10-1 Morinosato Wakamiya Atsugi Kanagawa Japan 2430197
Citazione:
A. Hara e N. Sasaki, "Control of nucleation and solidification direction of polycrystalline silicon by excimer laser irradiation", JPN J A P 2, 39(1AB), 2000, pp. L1-L4

Abstract

The nucleation site and solidification direction of polycrystalline silicon were controlled by excimer laser crystallization. The sidewall and the top of the amorphous silicon island, which includes a gradually narrowing region, were covered with a thick layer of polycrystalline silicon, and single-shot irradiation was performed from the back surface. The formation of only one nucleus was observed in a gradually narrowing region of width two times that of the lateral growth distance. Solidification from the nucleus toward a narrower width region was then effected in a region 2 mu m in width and 3 mu m in length. The growth mechanism is explained on the basis of the temperature gradient formed by the covering of the polycrystalline silicon and the gradually narrowing structure.

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Documento generato il 30/11/20 alle ore 17:06:54