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Titolo:
Low-temperature and high-rate deposition of SrTiO3 thin films by RF magnetron sputtering
Autore:
Kohara, N; Yoshida, A; Sawada, T; Kitagawa, M;
Indirizzi:
Matsushita Elect Ind Co Ltd, Cent Res Labs, Seika, Kyoto 6190237, Japan Matsushita Elect Ind Co Ltd Seika Kyoto Japan 6190237 yoto 6190237, Japan Matsushita Elect Ind Co Ltd, Elect Circuit Capacitor Div, Tsurumi Ku, Osaka 5380044, Japan Matsushita Elect Ind Co Ltd Osaka Japan 5380044 Ku, Osaka 5380044, Japan Matsushita Elect Ind Co Ltd, Corp Prod Engn Labs, Osaka 5718502, Japan Matsushita Elect Ind Co Ltd Osaka Japan 5718502 bs, Osaka 5718502, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 1, volume: 39, anno: 2000,
pagine: 172 - 177
SICI:
0021-4922(200001)39:1<172:LAHDOS>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
CAPACITORS;
Keywords:
SrTiO3; low substrate temperature; high deposition rate; Al/glass substrate; RF power; OES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Kohara, N Matsushita Elect Ind Co Ltd, Cent Res Labs, 3-4 Hikaridai, Seika, Kyoto 6190237, Japan Matsushita Elect Ind Co Ltd 3-4 Hikaridai Seika Kyoto Japan 6190237
Citazione:
N. Kohara et al., "Low-temperature and high-rate deposition of SrTiO3 thin films by RF magnetron sputtering", JPN J A P 1, 39(1), 2000, pp. 172-177

Abstract

SrTiO3 thin films have been prepared by RF magnetron sputtering at the a substrate temperature of 200 degrees C and a high deposition rate of 35 nm/min on Al/glass substrates. The deposition rate of the SrTiO3 thin film was controlled by RF power during the deposition. The orientation of the films changed and the grain boundaries became sparse with increasing RF power. Furthermore, the leakage current of the capacitors also increased with increasing RF power. As the RF power increased, the signal intensity ratios of O-2(+)/O and Ti/Sr in the optical emission spectroscopy decreased. The application of optimum working pressure resulted in recovery of the signal intensity ratios of O-2(+)/O in the optical emission spectroscopy and improvementin the properties of the SrTiO3 film deposited at a high RF power. The SrTiO3 film of 300 nm thickness exhibited a relative dielectric constant of 64and a leakage current of 4 x 10(-10) A/cm(2) at the voltage of +3 V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/10/20 alle ore 00:56:14