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Titolo:
ELECTRICAL ACTIVATION OF BORON-IMPLANTED IN P-HGCDTE (X=0.22) BY LOW-TEMPERATURE ANNEALING UNDER AN ANODIC OXIDE
Autore:
TALIPOV NK; OVSYUK VN; REMESNIK VG; VASILYEV VV;
Indirizzi:
RUSSIAN ACAD SCI,INST SEMICOND PHYS,LAVRENTYEV AVE 13 NOVOSIBIRSK 630090 RUSSIA
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 44, anno: 1997,
pagine: 266 - 269
SICI:
0921-5107(1997)44:1-3<266:EAOBIP>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION-IMPLANTATION; NATIVE OXIDE; HG1-XCDXTE; IMMERSION; BATH;
Keywords:
ELECTRICAL ACTIVATION OF BORON; DIFFERENTIAL HALL EFFECT; OPTICAL REFLECTION; SECONDARY ION MASS SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
N.K. Talipov et al., "ELECTRICAL ACTIVATION OF BORON-IMPLANTED IN P-HGCDTE (X=0.22) BY LOW-TEMPERATURE ANNEALING UNDER AN ANODIC OXIDE", Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 266-269

Abstract

The low-temperature electrical activation of boron atoms implanted inp-HgCdTe has been observed for the first time. The bulk crystals of p-Hg0.78Cd0.22Te were implanted at room temperature and at 250 degrees C with 150 keV B+ ions up to a dose of 3 x 10(16) cm(-2) through an anodic oxide with a thickness of 90 nm. The same control samples were implanted with N+ ions under cm analogous conditions. The two-step post-implant annealing was carried out at 250 degrees C for 2-4 h and then at 200 degrees C up to 34 h in a nitrogen atmosphere. Differential Hall effect measurements at 77 K, optical reflection and secondary ion mass spectroscopy were used for implanted surface layer studies. It was established that the doping efficiency of boron atoms amounts of 0.03-14% decreasing with the increasing boron ion dose and becoming higher in the case of ion implantation at 250 degrees C. Mercury loss was found not to occur from the surface of HgCdTe through an anodic oxide capduring such heat treatment. (C) 1997 Elsevier Science S.A.

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Documento generato il 05/12/20 alle ore 01:38:46